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| AP4511GD Pb Free Plating Product Advanced Power Electronics Corp. Low Gate Charge Fast Switching Speed PDIP-8 Package RoHS Compliant PDIP-8 S1 G1 G2 S2 D1 D1 D2 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID P-CH BVDSS RDS(ON) ID 35V 25m 7A -35V 40m -6.1A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 D1 D2 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 35 20 7 5.7 30 2.0 0.016 -55 to 150 -55 to 150 P-channel -35 20 -6.1 -5 -30 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit /W Data and specifications subject to change without notice 200621051-1/4 AP4511GD N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS BVDSS/Tj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 35 1 - Typ. 0.02 20 30 9 11 3 6 12 7 22 6 830 150 110 1.2 Max. Units 25 37 3 1 25 100 18 1330 1.8 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=7A VGS=4.5V, ID=5A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70oC) o VDS=VGS, ID=250uA VDS=10V, ID=7A VDS=35V, VGS=0V VDS=28V, VGS=0V VGS=20V ID=7A VDS=28V VGS=4.5V VDS=18V ID=1A RG=3.3,VGS=10V RD=18 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=1.7A, VGS=0V IS=7A, VGS=0V dI/dt=100A/s Min. - Typ. 18 12 Max. Units 1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge 2/7 AP4511GD P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=70 C) o o Test Conditions VGS=0V, ID=-250uA 2 Min. -35 -1 - Typ. -0.02 35 53 9 10 2 6 10 6 26 7 690 165 130 5.2 Max. Units 40 60 -3 -1 -25 100 16 1100 7.8 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25,ID=-1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg VGS=-10V, ID=-6A VGS=-4.5V, ID=-4A VDS=VGS, ID=-250uA VDS=-10V, ID=-6A VDS=-35V, VGS=0V VDS=-28V, VGS=0V VGS=20V ID=-6A VDS=-28V VGS=-4.5V VDS=-18V ID=-1A RG=3.3,VGS=-10V RD=18 VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-1.7A, VGS=0V IS=-6A, VGS=0V dI/dt=-100A/s Min. - Typ. 20 12 Max. Units -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 90/W when mounted on min. copper pad. 3/7 AP4511GD N-Channel 50 50 T A = 25 o C 40 ID , Drain Current (A) ID , Drain Current (A) 10V 7.0V 5.0V T A = 150 o C 40 10V 7.0V 30 30 5.0V 4.5V 20 20 4.5V 10 V G =3.0V 10 V G =3.0V 0 0 1 2 3 4 5 0 0 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 80 1.8 ID=5A T A =25 o C RDS(ON) (m ) 60 ID=7A V G =10V Normalized RDS(ON) 1.4 40 1.0 20 2 4 6 8 10 0.6 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 6 Normalized VGS(th) (V) 4 1.2 IS(A) T j =150 o C T j =25 o C 2 0.8 0 0 0.2 0.4 0.6 0.8 1 1.2 0.4 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4/7 AP4511GD N-Channel f=1.0MHz 16 1000 VGS , Gate to Source Voltage (V) I D =7A V DS =28V 12 C iss C oss C (pF) 8 100 C rss 4 0 0 5 10 15 20 25 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 0.2 10 100us 1ms 0.1 0.1 ID (A) 0.05 1 0.02 10ms 100ms 0.1 0.01 PDM 0.01 Single Pulse t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja =90o C/W T A =25 o C Single Pulse 1s DC 0.01 0.1 1 10 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 V DS =5V ID , Drain Current (A) VG QG 20 T j =25 C o T j =150 C o 4.5V QGS QGD 10 Charge 0 0 2 4 6 Q V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 5/7 AP4511GD P-Channel 50 50 T A = 25 C 40 o -10V -7.0V 40 T A = 150 C -ID , Drain Current (A) o -10V -7.0V -ID , Drain Current (A) -5.0V 30 -4.5V 30 -5.0V -4.5V 20 20 10 V G = - 3.0V 10 V G = - 3.0V 0 0 1 2 3 4 5 0 0 1 2 3 4 5 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 110 1.4 I D = -4 A T A =25 o C 90 1.2 I D =-6A V G =-10V Normalized RDS(ON) RDS(ON) (m) 70 1.0 50 0.8 30 2 4 6 8 10 0.6 -50 0 50 100 150 -V GS ,Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 6 4 Normalized -VGS(th) (V) 1.2 1.2 -IS(A) T j =150 o C T j =25 o C 2 0.8 0 0 0.2 0.4 0.6 0.8 1 0.4 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6/7 AP4511GD P-Channel 16 10000 f=1.0MHz -VGS , Gate to Source Voltage (V) I D = -6 A V DS = - 28V 12 8 C (pF) 1000 C iss 4 C oss C rss 0 0 5 10 15 20 25 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 10 100us 1ms 0.2 0.1 0.1 -ID (A) 0.05 1 10ms 100ms 0.02 0.01 PDM 0.01 Single Pulse t T Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=90 oC/W 0.1 T c =25 C Single Pulse o 1s DC 0.01 0.1 1 10 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 V DS =-5V -ID , Drain Current (A) VG QG -4.5V QGS QGD 20 T j =25 o C T j =150 o C 10 Charge 0 0 2 4 6 Q -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 7/7 |
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